OPTICAL-CONSTANTS OF AMORPHOUS GA2SE3

被引：10
作者：
ADACHI, S
OZAKI, S
机构：
[1] Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期
关键词：
AMORPHOUS SEMICONDUCTOR; GA2SE3; DIELECTRIC FUNCTION; REFRACTIVE INDEX; ABSORPTION COEFFICIENT; SPECTROSCOPIC ELLIPSOMETRY;
D O I：
10.1143/JJAP.32.4446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical response in amorphous (a-)Ga2Se3 Semiconductor in the 1.2-5.6-eV photon-energy range at room temperature has been measured by spectroscopic ellipsometry. It is found that the dielectric function epsilon=epsilon1+iepsilon2 of a-Ga2Se3 strongly resembles those of amorphous tetrahedrally bonded semiconductors. The optical energy gap estimated from the plots of Eepsilon2(E)1/2 versus E (photon energy) is 1.75 eV. Dielectric-related optical constants, such as the complex refractive index and absorption coefficient, of this amorphous semiconductor have also been presented.
引用
收藏
页码：4446 / 4448
页数：3
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