OPTICAL-CONSTANTS OF AMORPHOUS GA2SE3

被引：10

作者：

ADACHI, S

OZAKI, S

机构：

[1] Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期

关键词：

AMORPHOUS SEMICONDUCTOR; GA2SE3; DIELECTRIC FUNCTION; REFRACTIVE INDEX; ABSORPTION COEFFICIENT; SPECTROSCOPIC ELLIPSOMETRY;

D O I：

10.1143/JJAP.32.4446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical response in amorphous (a-)Ga2Se3 Semiconductor in the 1.2-5.6-eV photon-energy range at room temperature has been measured by spectroscopic ellipsometry. It is found that the dielectric function epsilon=epsilon1+iepsilon2 of a-Ga2Se3 strongly resembles those of amorphous tetrahedrally bonded semiconductors. The optical energy gap estimated from the plots of Eepsilon2(E)1/2 versus E (photon energy) is 1.75 eV. Dielectric-related optical constants, such as the complex refractive index and absorption coefficient, of this amorphous semiconductor have also been presented.

引用

页码：4446 / 4448

页数：3

共 8 条

[1] OPTICAL DISPERSION-RELATIONS IN AMORPHOUS-SEMICONDUCTORS [J].