Effect of the generation of surface states of Si-SiO2 interface boundary on the current of MOS-transistor dispersion

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作者：
Atamuratov, AE
Daliev, KS
Zainabidinov, SZ
Yusupov, AY
Adinaev, KM
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PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1995年 / 21卷 / 21期
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O59 [应用物理学];
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页码：79 / 83
页数：5
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