RADIATION HARDENING OF THERMAL OXIDES ON SILICON BY DISPLACEMENT DAMAGE

被引：13

作者：

DONOVAN, RP

SIMONS, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.1661615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2897 / +

页数：1

共 10 条

[1] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[3] RADIATION HARDENING OF THERMAL OXIDES ON SILICON VIA ION IMPLANTATION [J].

DONOVAN, RP ;

SIMONS, M ;

MONTEITH, LK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :203-+

[4]

FRITZSCHE CR, 1971, RADIAT EFF, V7, P87

[5]

GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[7]

HUGHES HL, 1971, 9TH ANN P REL PHYS, P33

[8] RADIATION EFFECTS IN MODIFIED OXIDE INSULATORS IN MOS STRUCTURES [J].

PERKINS, CW ;

AUBUCHON, KG ;

DILL, HG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :176-+

[9] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+

[10]

ZAININGER KH, 1966, FIELD EFFECT TRANSIS

← 1 →