GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS

被引：96
作者：
BASKIN, LM
LVOV, OI
FURSEY, GN
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 47卷 / 01期
关键词：
D O I：
10.1002/pssb.2220470105
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：49 / &
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共 20 条
[1]   FIELD EMISSION FROM PHOTOCONDUCTORS [J].
APKER, L ;
TAFT, E .
PHYSICAL REVIEW, 1952, 88 (05) :1037-1038
[2]   PHOTOSENSITIVE FIELD EMISSION FROM P-TYPE GERMNIUM [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3221-&
[3]   PHOTO-FIELD-EMISSION FROM HIGH-RESISTANCE SILICON AND GERMANIUM [J].
BORZYAK, PG ;
YATSENKO, AF ;
MIROSHNICHENKO, LS .
PHYSICA STATUS SOLIDI, 1966, 14 (02) :403-+
[4]  
Busch G., 1963, PHYS KONDENS MATER, V1, P367
[5]   UNIFIED THEORY OF THERMIONIC AND FIELD EMISSION FROM SEMICONDUCTORS [J].
CHRISTOV, SG .
PHYSICA STATUS SOLIDI, 1967, 21 (01) :159-&
[6]  
Elinson MI, 1965, RADIOTEKH ELEKTRON, V10, P1288
[7]  
Fursei G. N., 1969, Fizika Tverdogo Tela, V11, P3672
[8]  
FURSEI GN, 1968, VESTN LENINGR U, V16, P167
[9]   FIELD EMISSION FROM P-TYPE SI [J].
FURSEY, GN ;
EGOROV, NV .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :23-+
[10]   FIELD EMMISSION FROM P-TYPE GERMANIUM [J].
FURSEY, GN ;
SOKOLSKAYA, IL ;
IVANOV, VG .
PHYSICA STATUS SOLIDI, 1967, 22 (01) :39-+
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