共 50 条
- [1] ETCHING GERMANIUM WITH IODINE VAPOR IN AN ELECTRIC FIELD SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1967, 12 (01): : 125 - &
- [2] TEMPERATURE DEPENDENCE OF ETCHING RATE OF GERMANIUM IN IODINE VAPOR SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 11 (02): : 312 - &
- [5] ETCHING OF GALLIUM ARSENIDE AND INDIUM ANTIMONIDE BY IODINE VAPOR SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 10 (04): : 477 - &
- [6] SOME PHENOMENA OBSERVED ON ANODIC ETCHING OF GERMANIUM SOVIET PHYSICS-SOLID STATE, 1963, 4 (08): : 1666 - 1668
- [7] REFLECTION COEFFICIENT OF IODINE VAPOR FROM SINGLE-CRYSTAL GERMANIUM SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1968, 12 (05): : 825 - +
- [9] Vapor phase etching characteristics of InP by HCl PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 73 - 83