XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE

被引：114

作者：

GRUNTHANER, FJ ^{[1
]}

LEWIS, BF ^{[1
]}

ZAMINI, N ^{[1
]}

MASERJIAN, J ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1640 / 1646

页数：7

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