PHOTOCONDUCTIVITY OF HIGHLY EXCITED AIVBVI THIN-FILMS

被引：2

作者：

VAITKUS, J

PETRAUSKAS, M

TOMASIUNAS, R

MASTEIKA, R

机构：

[1] Vilnius University, Vilnius

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 06期

关键词：

71.30.Mw; 72.20.Kw; 73.40.Lq;

D O I：

10.1007/BF00324338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients gamma(A) almost-equal-to 5 X 10(-28) cm6 s-1 for PbTe and gamma(A) almost-equal-to 5.3 X 10(-29) cm6 s-1 for PbS for carrier concentration changes DELTA-N > 10(18) cm-3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.

引用

页码：553 / 555

页数：3

共 8 条

[1]

AUSTON DH, 1984, PICOSECOND OPTOELECT

[2] REMARKS ON THE CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION [J].

HAUG, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (09) :L287-L290

[3]

HERMAN KH, 1978, SOLID STATE ELECTRON, V21, P1487

[4] RECOMBINATION IN PB0.83SN0.17TE AT HIGH LEVELS OF OPTICAL EXCITATION [J].

HOAI, TX ;

HERRMANN, KH .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 83 (02) :465-470

[5]

JOHNSON AM, 1985, SPRINGER SER ELECTRO, V21

[6]

NEUSTROEV LN, 1986, FIZ TEKHN POLUPROV S, V1, P59

[7] PICOSECOND PHOTOCONDUCTIVITY OF CDSE AND CDTE THIN-FILMS [J].

VAITKUS, J ;

TOMASIUNAS, R ;

KUTRA, J ;

PETRAUSKAS, M ;

RINKUNAS, R ;

ZINDULIS, A .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :826-827

[8]

VAITKUS J, 1990, FIZ TEKHN POLUPROV S, V24, P1919

← 1 →