OPTICAL INVESTIGATION IN ULTRATHIN INAS/INP QUANTUM-WELLS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：24

作者：

BANVILLET, H ^{[1
]}

GIL, E ^{[1
]}

CADORET, R ^{[1
]}

DISSEIX, P ^{[1
]}

FERDJANI, K ^{[1
]}

VASSON, A ^{[1
]}

VASSON, AM ^{[1
]}

TABATA, A ^{[1
]}

BENYATTOU, T ^{[1
]}

GUILLOT, G ^{[1
]}

机构：

[1] INST NATL SCI APPL,PHYS MAT LAB,CNRS,UNITE RECH 358,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.349529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single and multiple InAs/InP strained quantum wells have been grown by hydride vapor-phase epitaxy (HVPE). A compact set of vent/run valves monitored by manifold switches and a computer allowed the vapor species to be changed. InAs growth times of 4-24 s followed by etching times of 7-14 s, in an InCl, HCl, and H-2 atmosphere, were used to control the thickness and interface abruptness. Low-temperature photoluminescence (PL) spectra have revealed emissions either in the form of a single peak or well-resolved multiple peaks attributed to monolayer variation in quantum-well thickness. The thinnest well obtained, observed for the first time by HVPE, has a PL energy transition at 1.28 eV. Experimental data agree well with theoretical calculations, taking into account strain effects on band structure and effective masses. The full widths at half maximum indicate good interfacial abruptness.

引用

页码：1638 / 1641

页数：4

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