共 50 条
- [41] DECAY TIMES OF ONE-DIMENSIONAL EXCITONS IN GAAS ALXGA1-XAS QUANTUM-WELL WIRES PHYSICAL REVIEW B, 1990, 41 (17): : 12338 - 12341
- [42] VELOCITY-FIELD CHARACTERISTICS OF SELECTIVELY DOPED GAAS/ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURES PHYSICAL REVIEW B, 1993, 47 (20): : 13868 - 13871
- [43] DEPENDENCE OF THE BINDING-ENERGY OF THE ACCEPTOR ON ITS POSITION IN A GAAS/ALXGA1-XAS QUANTUM-WELL PHYSICAL REVIEW B, 1991, 44 (08): : 4010 - 4013
- [46] 9 μm cutoff 640x512 pixel GaAs/AlxGa1-xAs quantum well infrared photodetector hand-held camera INFRARED DETECTORS AND FOCAL PLANE ARRAYS VII, 2002, 4721 : 144 - 150
- [50] Characterization of GaAs/AlxGa1-xAs multiple quantum well infrared detector structures using photoreflectance Journal of Applied Physics, 1992, 71 (10):