共 50 条
- [32] ELECTRONIC-STRUCTURE OF A SHALLOW ACCEPTOR CONFINED IN A GAAS/ALXGA1-XAS QUANTUM-WELL PHYSICAL REVIEW B, 1993, 47 (23): : 15675 - 15678
- [33] ELECTRON MOBILITIES IN MODULATION-DOPED ALXGA1-XAS/GAAS AND PSEUDOMORPHIC ALXGA1-XAS/INYGA1-YAS QUANTUM-WELL STRUCTURES PHYSICAL REVIEW B, 1993, 47 (07): : 3771 - 3778
- [35] Interband transitions in AlxGa1-xAs/AlAs quantum-well structures PHYSICAL REVIEW B, 1996, 53 (19): : 12912 - 12916
- [36] Transport mechanism of Gamma- and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors PHYSICAL REVIEW B, 1996, 54 (03): : 2059 - 2066
- [38] INGAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS WITH 3-5 MU-M RESPONSE COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 607 - 612
- [39] OPTICAL STUDIES OF ELECTRON AND HOLE FERMI SEAS IN A SINGLE GAAS/ALXGA1-XAS QUANTUM-WELL PHYSICAL REVIEW B, 1990, 41 (08): : 5040 - 5047