OXIDE AND INTERFACE PROPERTIES OF ANODIC OXIDE MOS STRUCTURES ON III-V COMPOUND SEMICONDUCTORS

被引：47
作者：
WEIMANN, G
机构：
[1] Forschungsinstitut der Deutschen Bundespost beim Fernmeldetechnischen Zentralamt, D 6100 Darmstadt
来源：
THIN SOLID FILMS | 1979年 / 56卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(79)90062-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MOS structures made with anodic oxides on GaAs, GaSb or GaP showed high interface state densities, especially in the upper half of the band gap. Charge injection into the oxides was observed. The properties of the oxides are discussed. © 1979.
引用
收藏
页码：173 / 182
页数：10
相关论文
共 50 条
[21]   LASER PROCESSING OF III-V COMPOUND SEMICONDUCTORS [J].
VENGURLEKAR, AS .
BULLETIN OF MATERIALS SCIENCE, 1988, 11 (2-3) :89-96
[22]   Point defects in III-V compound semiconductors [J].
Chen, N .
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 183-1 :85-93
[23]   MECHANICAL-PROPERTIES AND DISLOCATION DYNAMICS OF III-V COMPOUND SEMICONDUCTORS [J].
YONENAGA, I ;
SUMINO, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 131 (02) :663-670
[24]   Porous III-V compound semiconductors:: formation, properties, and comparison to silicon [J].
Föll, H ;
Carstensen, J ;
Langa, S ;
Christophersen, M ;
Tiginyanu, IM .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (01) :61-70
[25]   PRESSURE-DEPENDENT PHONON PROPERTIES OF III-V COMPOUND SEMICONDUCTORS [J].
TALWAR, DN ;
VANDEVYVER, M .
PHYSICAL REVIEW B, 1990, 41 (17) :12129-12139
[26]   HREM IMAGING AND MICROANALYSIS OF A III-V SEMICONDUCTOR OXIDE INTERFACE [J].
KRIVANEK, OL ;
FORTNER, SL .
ULTRAMICROSCOPY, 1984, 14 (1-2) :121-126
[27]   Creating oxide dot arrays on III-V semiconductors by AFM lithography [J].
Stadelmann, TO ;
Nicholas, RJ .
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180) :661-664
[28]   ELECTRONIC-STRUCTURES OF POINT-DEFECTS IN III-V COMPOUND SEMICONDUCTORS [J].
PUSKA, MJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (40) :7347-7366
[29]   Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors [J].
Jain, SC ;
Willander, M ;
Maes, H .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) :641-671
[30]   Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors [J].
IMEC, Leuven, Belgium .
Semicond Sci Technol, 5 (641-671)
12345