OXIDE AND INTERFACE PROPERTIES OF ANODIC OXIDE MOS STRUCTURES ON III-V COMPOUND SEMICONDUCTORS

被引：47
作者：
WEIMANN, G
机构：
[1] Forschungsinstitut der Deutschen Bundespost beim Fernmeldetechnischen Zentralamt, D 6100 Darmstadt
来源：
THIN SOLID FILMS | 1979年 / 56卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(79)90062-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MOS structures made with anodic oxides on GaAs, GaSb or GaP showed high interface state densities, especially in the upper half of the band gap. Charge injection into the oxides was observed. The properties of the oxides are discussed. © 1979.
引用
收藏
页码：173 / 182
页数：10
相关论文
共 50 条
[11]   Model of interface states at III-V oxide interfaces [J].
Robertson, John .
APPLIED PHYSICS LETTERS, 2009, 94 (15)
[12]   Interface states model for III-V oxide interfaces [J].
Robertson, J. .
MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1558-1560
[13]   Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors [J].
McIntyre, Paul C. ;
Oshima, Yasuhiro ;
Kim, Eunji ;
Saraswat, Krishna C. .
MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1536-1539
[14]   Electrical Properties of III-V/Oxide Interfaces [J].
Brammertz, G. ;
Lin, H. C. ;
Martens, K. ;
Alian, A. ;
Merckling, C. ;
Penaud, J. ;
Kohen, D. ;
Wang, W. -E ;
Sioncke, S. ;
Delabie, A. ;
Meuris, M. ;
Cayrnax, M. ;
Heyns, M. .
GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05) :375-+
[15]   OPTICAL INVESTIGATIONS OF SURFACE AND INTERFACE PROPERTIES AT III-V SEMICONDUCTORS [J].
SCHREIBER, J ;
HILDEBRANDT, S ;
KIRCHER, W ;
RICHTER, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3) :31-35
[16]   TRANSPORT PHENOMENA IN III-V COMPOUND SEMICONDUCTORS [J].
MATHUR, PC ;
SHYAM, R ;
JAIN, S .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 50 (01) :11-40
[17]   Point defects in III-V compound semiconductors [J].
Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 2000, 183 :85-94
[18]   Ohmic contacts to III-V compound semiconductors [J].
Piotrowska, A. ;
Kaminska, E. .
Thin Solid Films, 1990, 193 (1 -2 pt 1) :511-527
[19]   Surface passivation of III-V compound semiconductors [J].
Kapila, A ;
Malhotra, V .
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, :275-282
[20]   Growth kinetics of III-V compound semiconductors [J].
Dhanasekaran, R ;
Ramasamy, P .
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2000, 7 (5-6) :350-353
12345