SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD

被引：88

作者：

NAGATA, S ^{[1
]}

TANAKA, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：940 / 942

页数：3

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共 6 条

[1] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3057-&

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[3] GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD [J].

CHO, AY ;

REINHART, FK .

APPLIED PHYSICS LETTERS, 1972, 21 (08) :355-&

[4] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[5] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[6] TAPER COUPLERS FOR GAAS-ALXGA1-XAS WAVEGUIDE LAYERS PRODUCED BY LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY [J].

MERZ, JL ;

LOGAN, RA ;

WIEGMANN, W ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1975, 26 (06) :337-340