HIGH-TEMPERATURE OXIDATION OF METALS UNDER TIME-DEPENDENT GAS-PRESSURE

被引：3

作者：

TOMELLINI, M ^{[1
]}

GOZZI, D ^{[1
]}

机构：

[1] UNIV ROME LA SAPIENZA,DEPARTIMENTO CHIM,P ALDO MORO 5,I-00185 ROME,ITALY

来源：

OXIDATION OF METALS | 1986年 / 26卷 / 5-6期

关键词：

ELECTRIC FIELD EFFECTS;

D O I：

10.1007/BF00659338

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

A theoretical study on the high-temperature oxidation of thick oxide films grown under a time-dependent gas partial pressure is reported. The diffusion across the film is assumed to be the rate-limiting step of the overall reaction and Wagner's hypotheses were used as the starting point. A general formulation for the oxidation under no time constant gas pressure in terms of a time-dependent answer function is given. The effect of an external electric field on the reaction rate is also reported when a constant current density, J, is applied to the oxide scale.

引用

页码：305 / 314

页数：10