PHOTOCAPACITANCE EFFECT IN BORON-DOPED SILICON-CARBIDE

被引：0
作者：
BALLANDOVICH, VS
VIOLINA, GN
TAIROV, YM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：283 / 286
页数：4
相关论文
共 50 条
  • [11] ROLE OF BORON IN LUMINESCENCE OF SILICON-CARBIDE DOPED WITH NITROGEN AND BORON
    HAGEN, SH
    VANKEMENADE, AWC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01): : 97 - 105
  • [12] PREPARATION OF PURE AND BORON-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS
    SWIDERSKI, I
    SZCZUTOWSKI, W
    NIEMYSKI, T
    JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 125 - 134
  • [13] THERMOELECTRIC-POWER IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON AND SILICON-CARBIDE THIN-FILMS
    BANERJEE, R
    RAY, S
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 89 (1-2) : 1 - 8
  • [14] Role of carbon in the sintering of boron-doped silicon carbide
    Clegg, WJ
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2000, 83 (05) : 1039 - 1043
  • [15] THE PREPARATION OF BORON-DOPED SILICON-CARBIDE POWDER BY THE CARBOTHERMAL REDUCTION OF OXIDES DERIVED FROM THE HYDROLYZED METHYLTRIETHOXYSILANE
    SUGAHARA, Y
    TAKEDA, Y
    KURODA, K
    KATO, C
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 100 (1-3) : 542 - 546
  • [16] DIFFUSION OF BORON IN SILICON-CARBIDE
    MOKHOV, EN
    VODAKOV, YA
    SEMENOV, VV
    KHOLUYAN.GF
    ODING, VG
    LOMAKINA, GA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 414 - &
  • [17] SILICON-CARBIDE DOPED WITH GALLIUM
    VODAKOV, YA
    LOMAKINA, GA
    MOKHOV, EN
    RADOVANOVA, EI
    SOKOLOV, VI
    USMANOVA, MM
    YULDASHEV, GF
    MACHMUDOV, BS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01): : 37 - 42
  • [18] SPECTRAL DETERMINATION OF BORON IN SILICON-CARBIDE
    BOKOVA, VI
    AMOSOVA, LV
    INDUSTRIAL LABORATORY, 1977, 43 (12): : 1680 - 1680
  • [19] CHARACTERISTICS OF THE DIFFUSION OF BORON IN SILICON-CARBIDE
    VODAKOV, YA
    LOMAKINA, GA
    MOKHOV, EN
    ODING, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 222 - 223
  • [20] BORON DISTRIBUTION IN SINTERED SILICON-CARBIDE
    CARTER, WD
    HOLLOWAY, PH
    WHITE, C
    CLAUSING, R
    ADVANCED CERAMIC MATERIALS, 1988, 3 (01): : 62 - 65
12345