EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：280

作者：

OKUYAMA, H

NAKANO, K

MIYAJIMA, T

AKIMOTO, K

机构：

[1] Sony Corporation Research Center, Hodogaya, Yokohama, 240

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期

关键词：

BAND-GAP ENERGY (EG); LATTICE CONSTANT; REFRACTIVE INDEX; PHOTOLUMINESCENCE (PL); MGS; MGSE; CLADDING LAYER;

D O I：

10.1143/JJAP.30.L1620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new material, ZnMgSSe, as the cladding layer of a blue-light laser diode. Band-gap energy can be varied from 2.8 to near 4 eV, maintaining lattice-matching to a (100)GaAs substrate. The band-gap energies of MgS and MgSe (zincblende structure) are estimated to be about 4.5 eV and 3.6 eV, and the lattice constants are 5.62 angstrom and 5.89 angstrom, respectively. The refractive index of ZnMgSSe lattice-matched to GaAs is smaller than that of ZnSSe lattice-matched to GaAs. ZnMgSSe meets the requirements of the cladding layer of ZnSSe for fabricating the blue-light laser diode.

引用

页码：L1620 / L1623

页数：4

共 10 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY [J].