INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS

被引：107

作者：

ALAVI, K

AGGARWAL, RL

GROVES, SH

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.21.1311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1311 / 1315

页数：5

共 16 条

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JOHNSTON, WD ;

BARNS, RL .

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[6] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP [J].

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PORTAL, JC ;

HOULBERT, C ;

PERRIER, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :492-494

[7] ELECTROREFLECTANCE OF IN0.79GA0.21AS0.54P0.46 [J].

NISHINO, T ;

YAMAZOE, Y ;

HAMAKAWA, Y .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :861-862

[8]

PEREA EH, 1979, JUN EL MAT C BOULD C

[9] INTERBAND MAGNETO-ABSORPTION AND FARADAY ROTATION IN INSB [J].

PIDGEON, CR ;

BROWN, RN .

PHYSICAL REVIEW, 1966, 146 (02) :575-&

[10]

REINE M, 1972, PHYS REV B, V5, P3033, DOI 10.1103/PhysRevB.5.3033

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