HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES

被引：3
作者：
BEHRNDT, KH
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 03期
关键词：
D O I：
10.1016/0038-1101(71)90032-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：191 / &
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