MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K

被引：94

作者：

LAUX, SE

FISCHETTI, MV

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 469

页数：3

共 14 条

[1] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].

BUTURLA, EM ;

COTTRELL, PE ;

GROSSMAN, BM ;

SALSBURG, KA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :218-231

[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[3]

FISCHETTI MV, IN PRESS PHYS REV B

[4] A NEW DISCRETIZATION STRATEGY OF THE SEMICONDUCTOR EQUATIONS COMPRISING MOMENTUM AND ENERGY-BALANCE [J].

FORGHIERI, A ;

GUERRIERI, R ;

CIAMPOLINI, P ;

GNUDI, A ;

RUDAN, M ;

BACCARANI, G .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) :231-242

[5]

Hockney R.W., 1988, COMPUTER SIMULATIONS

[6] TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS [J].

KOBAYASHI, T ;

SAITO, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) :788-792

[7] MONTE-CARLO TREATMENT OF ELECTRON-ELECTRON COLLISIONS [J].

MATULIONIS, A ;

POZELA, J ;

REKLAITIS, A .

SOLID STATE COMMUNICATIONS, 1975, 16 (10-1) :1133-1137

[8] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS [J].

MODELLI, A ;

MANZINI, S .

SOLID-STATE ELECTRONICS, 1988, 31 (01) :99-104

[9] MONTE-CARLO CALCULATIONS ON HOT-ELECTRON ENERGY TAILS [J].

PHILLIPS, A ;

PRICE, PJ .

APPLIED PHYSICS LETTERS, 1977, 30 (10) :528-530

[10] HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

RISHTON, S ;

GANIN, E .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :464-466

← 1 2 →