APPLICATION OF REACTIVE-ION-BEAM ETCHING TO RECESSED-GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：19

作者：

IMAI, Y

OHWADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：889 / 893

页数：5

共 17 条

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