MOBILITY OF PARTIAL DISLOCATIONS IN SILICON

被引：273

作者：

WESSEL, K ^{[1
]}

ALEXANDER, H ^{[1
]}

机构：

[1] UNIV COLOGNE,INST PHYS,MET PHYS ABT 2,D-5000 COLOGNE,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 06期

关键词：

D O I：

10.1080/14786437708232975

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1523 / 1536

页数：14

共 20 条

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[9] EXTENDED DISLOCATIONS IN GERMANIUM [J].

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