TRANSIENT SIMULATION OF HETEROJUNCTION PHOTODIODES .2. ANALYSIS OF RESONANT-CAVITY ENHANCED PHOTODETECTORS

被引：20
作者：
UNLU, MS
ONAT, BM
LEBLEBICI, Y
机构：
[1] BOSTON UNIV,DEPT ELECT COMP & SYST ENGN,BOSTON,MA 02215
[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1995年 / 13卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/50.372435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency Is predicted for RCE, devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown.
引用
收藏
页码：406 / 415
页数：10
相关论文
共 14 条
[1]   ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS [J].
BOWERS, JE ;
BURRUS, CA .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1339-1350
[2]   OPTICAL RECEIVERS FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J].
BRAIN, M ;
LEE, TP .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1281-1300
[3]   4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER [J].
CHANDRASEKHAR, S ;
DENTAI, AG ;
JOYNER, CH ;
JOHNSON, BC ;
GNAUCK, AH ;
QUA, GJ .
ELECTRONICS LETTERS, 1990, 26 (22) :1880-1882
[4]   MULTILAYER REFLECTORS BY MOLECULAR-BEAM EPITAXY FOR RESONANCE ENHANCED ABSORPTION IN THIN HIGH-SPEED DETECTORS [J].
CHIN, A ;
CHANG, TY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :339-342
[5]   RESONANT-CAVITY INGAALAS/INGAAS/INALAS PHOTOTRANSISTORS WITH HIGH-GAIN FOR 1.3-1.6 MU-M [J].
DODABALAPUR, A ;
CHANG, TY .
APPLIED PHYSICS LETTERS, 1992, 60 (08) :929-931
[6]  
Hunsperger R. G., 1991, INTEGRATED OPTICS TH, V3rd
[7]   RESONANT CAVITY-ENHANCED (RCE) PHOTODETECTORS [J].
KISHINO, K ;
UNLU, MS ;
CHYI, JI ;
REED, J ;
ARSENAULT, L ;
MORKOC, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (08) :2025-2034
[8]   LOW-VOLTAGE HIGH-GAIN RESONANT-CAVITY AVALANCHE PHOTODIODE [J].
KUCHIBHOTLA, R ;
SRINIVASAN, A ;
CAMPBELL, JC ;
LEI, C ;
DEPPE, DG ;
HE, YS ;
STREETMAN, BG .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) :354-356
[9]  
LEBLEBICI Y, 1992, P IEEE INT S CIRCUIT, P895
[10]   ANALYSIS OF A RESONANT-CAVITY ENHANCED GAAS/ALGAAS MSM PHOTODETECTOR [J].
LI, ZM ;
LANDHEER, D ;
VEILLEUX, M ;
CONN, DR ;
SURRIDGE, R ;
XU, JM ;
MCDONALD, RI .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) :473-476
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