ION-BEAM MIXING OF CHROMIUM ON SILICON DIOXIDE FILMS

被引:2
作者
FREIRE, FL
机构
[1] Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22452-970 Rio de Janeiro
关键词
D O I
10.1016/0168-583X(93)95857-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Atomic mixing at the Cr/SiO2 interface induced by bombardment with noble gas ions (Ar, Kr and Xe) was studied using Rutherford backscattering spectrometry. The amount of mixing was determined as a function of fluence (1-20X10(15) ions/cm(2)), substrate temperature (300-800 K) and energy deposited in elastic collisions at the interface. Results for Cr/Al2O3 room-temperature ion mixing are also presented. The possible mechanisms of mass-transport through irradiated Cr/SiO2 interfaces are discussed.
引用
收藏
页码:361 / 365
页数:5
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