EXCITATION DENSITY DEPENDENCE OF LUMINESCENCE FROM BOUND MULTI-EXCITON COMPLEXES IN PHOSPHORUS DOPED SILICON

被引：7
作者：
HENRY, MO
LIGHTOWLERS, EC
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 13期
关键词：
D O I：
10.1088/0022-3719/11/13/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L555 / L558
页数：4
相关论文
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