GA-GAP-GAAS TERNARY PHASE DIAGRAM

被引:39
作者
ANTYPAS, GA
机构
关键词
D O I
10.1149/1.2407608
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:700 / &
相关论文
共 16 条
[1]  
ANTYPAS GA, TO BE PUBLISHED
[2]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[3]  
DARKEN LS, 1967, T METALL SOC AIME, V239, P80
[4]  
DARKEN LS, 1967, T METALL SOC AIME, V239, P90
[5]  
GORYUNOVA NA, 1965, CHEMISTRY DIAMOND LI
[6]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[7]  
ILEGEMS M, 1969, 2 P INT S GAAS, P3
[8]   PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J].
KANG, CS ;
GREENE, PE .
APPLIED PHYSICS LETTERS, 1967, 11 (05) :171-&
[9]  
MOON RM, PRIVATE COMMUNICATIO
[10]   PHASE DIAGRAM OF GAAS-GAP QUASI-BINARY SYSTEM [J].
OSAMURA, K ;
MURAKAMI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) :967-&