共 50 条
- [1] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 41 - 43
- [2] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529
- [3] TIME OF RADIATION RELAXATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE DOKLADY AKADEMII NAUK SSSR, 1977, 237 (03): : 552 - 554
- [4] QUANTUM EFFICIENCY AND LIFETIME OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 733 - 735
- [5] INVESTIGATION OF PROCESSES OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 781 - 784
- [6] SLOW RELAXATION OF NONEQUILIBRIUM CARRIERS IN PURE EPITAXIAL N-TYPE GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 811 - 813
- [8] RECOMBINATION OF CARRIERS IN GALLIUM-ARSENIDE CONTAINING DEFECT CLUSTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 55 - 58