RAMAN STUDIES OF SOL-GEL ALUMINA - FINITE-SIZE EFFECTS IN NANOCRYSTALLINE ALO(OH)

被引:82
作者
DOSS, CJ
ZALLEN, R
机构
[1] Department of Physics, Virginia Tech, Blacksburg
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 21期
关键词
D O I
10.1103/PhysRevB.48.15626
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A systematic Raman-scattering investigation has been carried out on sol-gel alumina prepared by the hot-water hydrolysis and condensation of AI(OC4H9)3, the Yoldas process, as a function of process variables such as the time spent in the sol phase. Nanocrystalline boehmite, gamma-AIO(OH), is the principal component of these materials. We have found small but systematic changes, as a function of sol aging time, in the line shape and position of the dominant boehmite Raman band observed in the alumina hydrogels. These spectral changes are interpreted in terms of nanocrystallinity-induced finite-size effects associated with the slow growth of AIO(OH) nanocrystals in the sol. X-ray-diffraction experiments were used to determine nanocrystal sizes (as small as 3 nm for gels prepared from fresh sols) and to estimate growth kinetics from the Raman-line-shape results. The Raman peak-position shift is proportional to L(-alpha), where L is the average nanocrystal size and alpha is a Raman-versus-size scaling exponent. For AIO(OH) we find a to be 1.0, close to the scaling-exponent values reported for graphite and boron nitride (BN) and different from the values (about 1.5) that describe the reported behavior of Si and GaAs.
引用
收藏
页码:15626 / 15637
页数:12
相关论文
共 40 条
[1]   RAMAN-STUDY OF ALUMINA GELS [J].
ASSIH, T ;
AYRAL, A ;
ABENOZA, M ;
PHALIPPOU, J .
JOURNAL OF MATERIALS SCIENCE, 1988, 23 (09) :3326-3331
[2]   INFRARED LATTICE VIBRATIONS AND DIELECTRIC DISPERSION IN CORUNDUM [J].
BARKER, AS .
PHYSICAL REVIEW, 1963, 132 (04) :1474-+
[3]  
BRINKER CJ, 1990, SOL GEL SCI, P371
[4]  
BRINKER CJ, 1990, SOL GEL SCI, P599
[5]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[6]   CRYSTAL-STRUCTURE OF BOEHMITE [J].
CHRISTOPH, GG ;
CORBATO, CE ;
HOFMANN, DA ;
TETTENHORST, RT .
CLAYS AND CLAY MINERALS, 1979, 27 (02) :81-86
[7]   STRUCTURE REFINEMENT OF DEUTERATED BOEHMITE [J].
CORBATO, CE ;
TETTENHORST, RT ;
CHRISTOPH, GG .
CLAYS AND CLAY MINERALS, 1985, 33 (01) :71-75
[8]   RAMAN-SCATTERING EVALUATION OF LATTICE DAMAGE AND ELECTRICAL-ACTIVITY IN BE-IMPLANTED GAAS [J].
GARGOURI, M ;
PREVOT, B ;
SCHWAB, C .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3902-3911
[9]   RAMAN, TRANSMISSION ELECTRON-MICROSCOPY, AND CONDUCTIVITY MEASUREMENTS IN MOLECULAR-BEAM DEPOSITED MICROCRYSTALLINE SI AND GE - A COMPARATIVE-STUDY [J].
GONZALEZHERNANDEZ, J ;
AZARBAYEJANI, GH ;
TSU, R ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1350-1352
[10]   RAMAN-SCATTERING DEPTH PROFILE OF THE STRUCTURE OF ION-IMPLANTED GAAS [J].
HOLTZ, M ;
ZALLEN, R ;
BRAFMAN, O ;
MATTESON, S .
PHYSICAL REVIEW B, 1988, 37 (09) :4609-4617