ION-IMPLANTATION DOPING OF CD0.2HG0.8TE FOR INFRARED DETECTORS

被引：45

作者：

RYSSEL, H

LANG, G

BIERSACK, JP

MULLER, K

KRUGER, W

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

[2] TECH UNIV MUNICH,INST RADIOCHEM,D-8046 GARCHING,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：58 / 62

页数：5

共 18 条

[1]

BIERSACK JP, UNPUBLISHED

[2]

DEARNALEY G., 1973, ION IMPLANTATION

[3] PROPERTIES OF HG IMPLANTED HG1-XCDXTE INFRARED DETECTORS [J].

FIORITO, G ;

GASPARRINI, G ;

SVELTO, F .

APPLIED PHYSICS, 1978, 17 (01) :105-110

[4] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

HARMAN, TC ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1971, 18 (08) :321-&

[5]

JAHNEL F, UNPUBLISHED

[6] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].

JOHNSON, ES ;

SCHMIT, JL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38

[7]

Keyes R.J., 1977, OPTICAL INFRARED DET

[8]

Lanir M, 1978, IEDM TECHNICAL DIGES, P421

[9]

Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[10] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J].

MARINE, J ;

MOTTE, C .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :450-452

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