GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES

被引：39

作者：

ASAHI, H

ASAMI, K

WATANABE, T

YU, SJ

KANEKO, T

EMURA, S

GONDA, S

机构：

[1] Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.105207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short period GaP/AlP superlattices are grown on GaP and GaAs substrates at 600-degrees-C by gas source molecular beam epitaxy with growth interruption. Alternating monolayer growth of GaP and AlP is confirmed by the observation of the reflection high-energy electron diffraction intensity oscillations during growth. The formation of short period superlattice structures and the zone-folded LO phonons are observed in the x-ray diffraction rocking curves and Raman spectra, respectively.

引用

页码：1407 / 1409

页数：3

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