INFRARED ABSORPTION IN GALLIUM PHOSPHIDE

被引：36
作者：
PIKHTIN, AN
YASKOV, DA
机构：
[1] Department of Dielectrics and Semiconductors, V. I. Ulyanov (Lenin) Electrical Engineering Institute
来源：
PHYSICA STATUS SOLIDI | 1969年 / 34卷 / 02期
关键词：
D O I：
10.1002/pssb.19690340244
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation was made on the infrared absorption spectra of gallium phosphide single crystals doped with different impurities in the temperature range from 90 to 420°K. With decreasing temperature a transformation of the absorption spectrum due to interband transitions between conduction band valleys to the absorption spectrum due to impurity states was observed. On the basis of a theoretical analysis of the results obtained, a number of parameters of the GaP band structure and impurity states characteristics have been determined. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：815 / &
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