EFFECT OF A PARALLEL MAGNETIC-FIELD ON TUNNELING IN GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引：18

作者：

LEBENS, JA ^{[1
]}

SILSBEE, RH ^{[1
]}

WRIGHT, SL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.37.10308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10308 / 10311

页数：4

共 11 条

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[8] RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES [J].

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