HOT-CARRIER-INDUCED BIPOLAR-TRANSISTOR DEGRADATION DUE TO BASE DOPANT COMPENSATION BY HYDROGEN - THEORY AND EXPERIMENT

被引：13

作者：

QUON, D ^{[1
]}

GOPI, PK ^{[1
]}

SONEK, GJ ^{[1
]}

LI, GP ^{[1
]}

机构：

[1] UNIV CALIF IRVINE,DEPT ELECT & COMP ENGN,IRVINE,CA 92717

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 10期

关键词：

D O I：

10.1109/16.324594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New experimental and analytical results are presented which show that extrinsic and intrinsic base dopant compensation by hydrogen is responsible for large changes in the bipolar transistor parameters of emitter-base breakdown voltage (V(ebo)), forward collector current (I(c)) and series base resistance (R(bx)) when such transistors are operated under avalanche and inverted mode stress conditions. A new physical model has been developed to explain the observed changes in V(ebo) and I(c) as a function of stress time, and the analytical results are shown to be well correlated with the experimental data. Lastly, the effects of degradation on transistor voltage gain bandwidth (f(max)) and emitter coupled bipolar comparator delay (tau(delay)) are assessed and discussed in terms of circuit performance degradation.

引用

页码：1824 / 1830

页数：7

共 32 条

[1]

Burnett D., 1990, 28th Annual Proceedings. Reliability Physics 1990 (Cat. No.90CH2787-0), P164, DOI 10.1109/RELPHY.1990.66081

[2] MODELING HOT-CARRIER EFFECTS IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J].

BURNETT, JD ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2238-2244

[3]

DREYER ML, 1992, 30TH P INT REL PHYS, P95

[4]

Dunkley J., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P785, DOI 10.1109/IEDM.1992.307475

[5]

GIACOLETTO LJ, 1972, IEEE T ELECTRON DEV, P692

[6] NEW DEGRADATION MECHANISM ASSOCIATED WITH HYDROGEN IN BIPOLAR-TRANSISTORS UNDER HOT-CARRIER STRESS [J].

GOPI, PK ;

LI, GP ;

SONEK, GJ ;

DUNKLEY, J ;

HANNAMAN, D ;

PATTERSON, J ;

WILLARD, S .

APPLIED PHYSICS LETTERS, 1993, 63 (09) :1237-1239

[7] BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON [J].

HERRERO, CP ;

STUTZMANN, M ;

BREITSCHWERDT, A .

PHYSICAL REVIEW B, 1991, 43 (02) :1555-1575

[8] TRAP-LIMITED HYDROGEN DIFFUSION IN DOPED SILICON [J].

HERRERO, CP ;

STUTZMANN, M ;

BREITSCHWERDT, A ;

SANTOS, PV .

PHYSICAL REVIEW B, 1990, 41 (02) :1054-1058

[9] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS - A REVIEW OF EXPERIMENTAL RESULTS [J].

JOHNSON, NM ;

DOLAND, C ;

PONCE, F ;

WALKER, J ;

ANDERSON, G .

PHYSICA B, 1991, 170 (1-4) :3-20

[10] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

← 1 2 3 4 →