ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES

被引：38

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

KEEVER, M ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1023 / 1028

页数：6

共 10 条

[1]

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[3] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[4] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386

[5] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES [J].

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[6] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

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[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

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[8]

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[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

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STURGE, MD .

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[10] INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPER-LATTICES [J].

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APPLIED PHYSICS LETTERS, 1981, 38 (09) :691-693

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