SOLITARY-WAVE DYNAMICS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS

被引：12

作者：

CANTALAPIEDRA, IR

BONILLA, LL

BERGMANN, MJ

TEITSWORTH, SW

机构：

[1] UNIV CARLOS III,ESCUELA POLITECN SUPER,E-28913 LEGANES,SPAIN

[2] DUKE UNIV,DEPT PHYS,DURHAM,NC 27708

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.12278

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Numerical-simulation results are presented for a simple drift-diffusion model which describes time-dependent and nonlinear electrical transport properties of extrinsic semiconductors under time-independent (dc) voltage bias. Simulations for finite-length samples with Ohmic boundary conditions yield dynamically stable solitary space-charge waves that travel periodically across the sample. Numerical estimates of wave speed, the wave size, and onset phenomena are in excellent agreement with recent experiments in p-type germanium.

引用

页码：12278 / 12281

页数：4

共 23 条

[1] FIRING WAVE INSTABILITY OF THE CURRENT FILAMENTS IN A SEMICONDUCTOR - AN ANALOGY WITH NEURODYNAMICS [J].