SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES

被引：20

作者：

JAEGER, RC ^{[1
]}

GAENSSLEN, FH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold voltage shifts in ion-implanted depletion-mode MOSFET's depart substantially from the usual dose proportional shift of enhancement-mode devices. Analytic expressions for the relationship between threshold voltage shift and implanted donor dose and position are extended to include impurity freezeout at low temperatures, and a simple model for the observed low substrate sensitivity at low temperature is presented. Criteria to avoid parasitic subthreshold conduction in depletion-mode devices are also established using the threshold shift formulation. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：501 / 508

页数：8

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