CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS

被引：0

作者：

VEINGER, AI

GNILOV, SV

SARGSYAN, MP

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 02期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：183 / 185

页数：3

共 50 条

[1] INFLUENCE OF DEFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS
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[4] CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION
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[5] CURRENT OF HOT CARRIERS ACROSS A P-N-JUNCTION
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[6] AMPLIFICATION OF THE CURRENT IN A P-N-JUNCTION WITH HOT CARRIERS
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[7] CURRENT-VOLTAGE CHARACTERISTIC OF A MICROPLASMA IN A GERMANIUM P-N-JUNCTION
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[8] IDEALITY FACTOR OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION DURING THE HEATING OF CARRIERS AND PHONONS
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[9] IMPEDANCE OF A P-N-JUNCTION WITH HOT CARRIERS
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[10] CURRENT-VOLTAGE CHARACTERISTIC OF A SILICON P-N-JUNCTION IN THE MICROPLASMA BREAKDOWN REGION
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