LOW-TEMPERATURE GROWTH OF EPITAXIAL LINBO3 FILMS ON SAPPHIRE(0001) SUBSTRATES USING PULSED-LASER DEPOSITION

被引：58

作者：

LEE, SH

SONG, TK

NOH, TW

LEE, JH

机构：

[1] Seoul Natl Univ, Seoul

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.115486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LiNbO3 films have been studied with various deposition techniques, including rf sputtering, molecular beam epitaxy, liquid phase epitaxy, and sol-gel process. Through pulsed laser deposition (PLD), high quality epitaxial LiNbO3 films were fabricated. High quality thin films were grown on c-cut sapphire substrates from a LiNbO3 single-crystal target. Reported are efforts to obtain epitaxial LiNbO3 thin films at a low deposition temperature of 400-450 °C. The oxygen pressure during the deposition was found to be an important parameter which influences crystalline orientations.

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页码：43 / 45

页数：3

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