REFRACTIVE-INDEXES OF (AL, GA, IN)AS EPILAYERS ON INP FOR OPTOELECTRONIC APPLICATIONS

被引：76

作者：

MONDRY, MJ

BABIC, DI

BOWERS, JE

COLDREN, LA

机构：

[1] Department of Electrical Engineering, University of California, Santa Barbara

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MBE grown bulk and short period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.

引用

页码：627 / 630

页数：4

共 10 条

[1]

BEBERNARDI C, 1990, J APPLY PHYS, V68, P6513

[2] REFRACTIVE-INDEX DATA FROM GAXIN1-XASYP1-Y FILMS [J].