PHYSICAL EFFECTS IN SMALL GEOMETRY MOS-TRANSISTORS

被引:2
作者
MOLL, JL
SUN, EY
机构
关键词
D O I
10.7567/JJAPS.19S1.77
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:77 / 83
页数:7
相关论文
共 6 条
[1]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[2]  
SUN E, 1978, BREAKDOWN MECHANISM
[3]  
SUN E, 1978, SIMPLE SHORT CHANNEL
[4]  
SUN E, 1978, NOV AS CIRC C
[5]  
TROUTMAN RR, 1979, IEEE T ELECTRON DEV, V26
[6]  
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2