CONTRIBUTION TO MEASUREMENT OF MAGNETORESISTANCE OF INHOMOGENEOUS SEMICONDUCTORS

被引：0

作者：

BOCANEK, L

机构：

来源：

CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A | 1971年 / A 21卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：155 / &

相关论文

共 10 条

[1] ELECTRICAL PROPERTIES OF STANNOUS SELENIDE
ASANABE, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (03) : 281 - 296
[2] ASANABE S, 1960, J PHYS SOC JAP, V15, P281
[3] INFLUENCE OF MAGNETOCONDUCTIVITY DISCONTINUITIES ON GALVANOMAGNETIC EFFECTS IN INDIUM ANTIMONIDE
BATE, RT
BELL, JC
BEER, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 806 - &
[4] INFLUENCE OF CONDUCTIVITY GRADIENTS ON GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
BATE, RT
BEER, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 800 - &
[5] GALVANOMAGNETIC EFFECTS IN III-V COMPOUND SEMIICONDUCTORS
BEER, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2107 - &
[6] BEER AC, 1963, SOLID STATE PHYSI S4, P308
[7] GALVANOMAGNETIC PROPERTIES IN INHOMOGENEOUS INDIUM ANTIMONIDE AT 77 DEGREES K
FUJISADA, H
KATAOKA, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 24 (01) : 102 - &
[8] EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS
HERRING, C
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) : 1939 - 1953
[9] WEISS H, 1961, J APPL PHYS, V32, P2064
[10] ZAVADSKII EA, 1965, FIZ TVERD TELA, V7, P3582