首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
THEORETICAL APPROACH UPON THE KINETIC OF GALLIUM-ARSENIDE EPITAXIAL DEPOSITION BY CVD-OM AND COMPARISON WITH EXPERIMENTAL RESULTS
被引:8
作者
:
GAVE, G
论文数:
0
引用数:
0
h-index:
0
GAVE, G
LEMETAYER, M
论文数:
0
引用数:
0
h-index:
0
LEMETAYER, M
BOUREE, JE
论文数:
0
引用数:
0
h-index:
0
BOUREE, JE
机构
:
来源
:
REVUE DE PHYSIQUE APPLIQUEE
|
1979年
/ 14卷
/ 10期
关键词
:
D O I
:
10.1051/rphysap:019790014010087500
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:875 / 886
页数:12
相关论文
共 25 条
[1]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
:314
-316
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
:1642
-1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
:683
-687
[4]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:284
-289
[5]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1382
-1388
[6]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1389
-1391
[7]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[8]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:317
-320
[9]
BAN VS, 4TH INT C VAP GROWTH
[10]
BAN VS, 1976, OCT M EL SOC LAS VEG
←
1
2
3
→
共 25 条
[1]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
:314
-316
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
:1642
-1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
:683
-687
[4]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:284
-289
[5]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1382
-1388
[6]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1389
-1391
[7]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[8]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:317
-320
[9]
BAN VS, 4TH INT C VAP GROWTH
[10]
BAN VS, 1976, OCT M EL SOC LAS VEG
←
1
2
3
→