QUANTUM WIRES IN INGAAS INP FABRICATED BY HOLOGRAPHIC PHOTOLITHOGRAPHY

被引：63

作者：

MILLER, BI

SHAHAR, A

KOREN, U

CORVINI, PJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.101222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：188 / 190

页数：3

共 15 条

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ENGLISH, JH .

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[2] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J].

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[3] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAPON, E ;

HARBISON, JP ;

YUN, CP ;

STOFFEL, NG .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :607-609

[4] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J].

KASH, K ;

SCHERER, A ;

WORLOCK, JM ;

CRAIGHEAD, HG ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045

[5] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MARSH, JH ;

ROBERTS, JS ;

CLAXTON, PA .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1161-1163

[6] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

SCHUBERT, EF ;

KOREN, U ;

OURMAZD, A ;

DAYEM, AH ;

CAPIK, RJ .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386

[7] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

PANISH, MB ;

TEMKIN, H ;

HAMM, RA ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :164-166

[8]

PETROFF PM, 1982, APPL PHYS LETT, V42, P636

[9] RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :145-149

[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

HIRTZ, JP ;

ZIEMELIS, UO ;

DELALANDE, C ;

ETIENNE, B ;

VOOS, M .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587

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