METAL CONTACTS TO SILICON AND INDIUM-PHOSPHIDE CLEAVED SURFACES AND THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS

被引:108
作者
WILLIAMS, RH
VARMA, RR
MONTGOMERY, V
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词
D O I
10.1116/1.570214
中图分类号
O59 [应用物理学];
学科分类号
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页码:1418 / 1421
页数:4
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共 36 条
[1]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[2]   INTERFACE STATES AT GA-GAAS INTERFACE [J].
BACHRACH, RZ ;
BIANCONI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528
[3]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[4]  
BAUER RS, 1978, P INT C PHYSICS SEMI
[5]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[6]  
FLORES F, J PHYS C
[7]   PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].
GOBELI, GW ;
ALLEN, FG .
PHYSICAL REVIEW, 1965, 137 (1A) :A245-&
[8]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[9]   INTERACTION OF AG WITH SI(111) [J].
HOUSLEY, M ;
HECKINGBOTTOM, R ;
TODD, CJ .
SURFACE SCIENCE, 1977, 68 (01) :179-188
[10]   MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .1. SURFACE PLASMONS AND ELECTRON-ELECTRON SCREENED INTERACTION [J].
INKSON, JC .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (18) :2599-&