ANISOTROPIC ETCHING OF SILICON AT HIGH-PRESSURE

被引：12

作者：

ABBOTT, AP ^{[1
]}

CAMPBELL, SA ^{[1
]}

SATHERLEY, J ^{[1
]}

SCHIFFRIN, DJ ^{[1
]}

机构：

[1] UNIV PORTSMOUTH,DEPT CHEM,PORTSMOUTH PO1 2DT,ENGLAND

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1993年 / 348卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(93)80154-A

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

[No abstract available]

引用

页码：473 / 479

页数：7

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[5] ANISOTROPIC ETCHING OF SILICON [J].

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TUFTON, PJ .

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[7] OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY [J].

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MEINDL, JD .

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[8]

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[9]

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[10] HYDROGEN DIFFUSION AND THE CATALYSIS OF ENHANCED OXYGEN DIFFUSION IN SILICON AT TEMPERATURES BELOW 500-DEGREES-C [J].

NEWMAN, RC ;

TUCKER, JH ;

BROWN, AR ;

MCQUAID, SA .

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