TRANSPORT-PROPERTIES OF INDIUM TIN OXIDE/P-INP STRUCTURES

被引：10
作者：
LUO, JK
THOMAS, H
机构：
[1] School of Electrical, Electronic, and Systems Engineering, University of Wales, College of Cardiff
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期
关键词：
D O I：
10.1063/1.108846
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
I-V properties of indium tin oxide (ITO)/p-InP solar cell structures measured at various temperatures show that the conduction mechanism is dominated by tunneling at low forward bias, and by thermionic emission at high forward bias. An increase of barrier height of 200-300 meV was found for all ITO/InP diodes compared with Au/InP Schottky diodes. Donorlike defects were found to be responsible for the increase of barrier height, and to cause the defect-assisted tunneling conduction. The experimental results support the model of a buried n+/p junction with the n+ layer induced by the sputter deposition of ITO.
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页码：705 / 707
页数：3
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