QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2
|
作者：
YANG, YF [1 ]
HOUSTON, PA [1 ]
HOPKINSON, M [1 ]
机构：
[1] ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 02期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quasiballistic electron transport in the InGaAs base of an npn HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.
引用
收藏
页码：145 / 147
页数：3
相关论文
共 50 条
  • [31] HOT-ELECTRON TRANSPORT IN THE BASE OF HETEROJUNCTION BIPOLAR-TRANSISTORS
    HAYES, JR
    LEVI, AFJ
    ENGLISH, JH
    GOSSARD, AC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1865 - 1865
  • [32] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    FEYGENSON, A
    RITTER, D
    HAMM, RA
    SMITH, PR
    MONTGOMERY, RK
    YADVISH, RD
    TEMKIN, H
    PANISH, MB
    ELECTRONICS LETTERS, 1992, 28 (07) : 607 - 609
  • [33] IMPROVED BREAKDOWN OF ALINAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    FULLOWAN, TR
    PEARTON, SJ
    KOPF, RF
    CHEN, YK
    CHIN, MA
    REN, F
    ELECTRONICS LETTERS, 1991, 27 (25) : 2340 - 2341
  • [34] FORWARD TRANSIT DELAY IN IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM ELECTRON-TRANSPORT
    LASKAR, J
    NOTTENBURG, RN
    LEVI, AFJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2122 - 2122
  • [35] ELECTRIC-RESISTANCE OF METALLIC MICROBRIDGES UNDER CONDITIONS OF BALLISTIC AND QUASI-BALLISTIC ELECTRON-TRANSPORT
    VDOVIN, EE
    KASUMOV, AY
    KOPETSKY, CV
    LEVINSON, IB
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1987, 92 (03): : 1026 - 1041
  • [36] Continuity-equation analysis of hot electron base transport in InP/InGaAs heterojunction bipolar transistors
    Nakajima, Hiroki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 485 - 490
  • [37] A 10GBIT/S OEIC PHOTORECEIVER USING INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CHANDRASEKHAR, S
    LUNARDI, LM
    GNAUCK, AH
    RITTER, D
    HAMM, RA
    PANISH, MB
    QUA, GJ
    ELECTRONICS LETTERS, 1992, 28 (05) : 466 - 468
  • [38] HIGH-FREQUENCY INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON A SI SUBSTRATE
    MATSUOKA, Y
    KURISHIMA, K
    MAKIMOTO, T
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) : 357 - 359
  • [39] FABRICATION AND CHARACTERIZATION OF HIGH-PERFORMANCE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    KURISHIMA, K
    NAKAJIMA, H
    KOBAYASHI, T
    MATSUOKA, Y
    ISHIBASHI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1319 - 1326
  • [40] EFFECT OF SURFACE PASSIVATION WITH SIN ON THE ELECTRICAL-PROPERTIES OF INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    OUACHA, A
    WILLANDER, M
    HAMMARLUND, B
    LOGAN, RA
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) : 5602 - 5605
12345