QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2
作者：
YANG, YF [1 ]
HOUSTON, PA [1 ]
HOPKINSON, M [1 ]
机构：
[1] ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 02期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quasiballistic electron transport in the InGaAs base of an npn HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.
引用
收藏
页码：145 / 147
页数：3
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