QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

YANG, YF ^{[1
]}

HOUSTON, PA ^{[1
]}

HOPKINSON, M ^{[1
]}

机构：

[1] ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasiballistic electron transport in the InGaAs base of an npn HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.

引用

页码：145 / 147

页数：3

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