BETA-SILICON CARBIDE FILMS

被引：50
作者：
RAICHOUDHURY, P
FORMIGONI, NP
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 10期
关键词：
D O I：
10.1149/1.2411554
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The cubic form of silicon carbide (!-SiC) has a forbidden energy gap of 2. 3 ev and behaves as an intrinsic semiconductor up to temperatures near 1000 C. It is, therefore, an interesting material for electron devices at high operating temperatures. In this paper the authors have examined the preparation of thin films of !-SiC using different vapor deposition reactions, infrared transmission spectra and electron diffraction patterns, and film-growth mechanisms under different reaction conditions.
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页码：1440 / +
页数：1
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